april 2014 ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 www.fairchildsemi.com 1 FQD17P06 / fqu17p06 p- channel qfet ? mosfet - 60 v, -12 a, 135 m description features absolute maximum ratings t c = 25c unless otherwise noted . thermal characteristics this p-channel enhancement mode power mosfet is produced using fairchild semiconductor s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications. ? -12 a, -60 v, r ds(on) = 135 m ? (max.) @ v gs = -10 v, i d = - 6 a ? low gate charge (typ. 21 nc) ? low crss (typ. 80 pf) ? 100% avalanche tested symbol parameter FQD17P06 / fqu17p06 unit v dss drain-source voltage -60 v i d drain current - continuous (t c = 25c) -12 a - continuous (t c = 100c) -7.6 a i dm drain current - pulsed (note 1) -48 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 300 mj i ar avalanche current (note 1) -12 a e ar repetitive avalanche energy (note 1) 4.4 mj dv/dt peak diode recovery dv/dt (note 3) -7.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 44 w - derate above 25c 0.35 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for solderin g purposes, 1/8 from case for 5 seconds . 300 c symbol parameter FQD17P06 / fqu17p06 unit r jc thermal resistance, junction-to-case, max. 2.85 c /w r ja thermal resistance, junction to ambient (minimum pad of 2-oz copper), max. 110 r ja thermal resistance, junc tion to ambient (*1 in 2 pad of 2-oz copper), max. 50 * when mounted on the minimum pad size recommended (pcb mount) FQD17P06 / fqu17p06 p-channel qfet ? mosfet g d s i-pak d-pak g s d g s d
www.fairchildsemi.com 2 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 part number top mark package packing method reel size tape width quantity dpak tape and reel 330 mm 16 mm 2500 units package marking and ordering information electrical characteristics t c = 25c unless otherwise noted . notes: 1. repetitive rating: pulse-width limit ed by maximum j unction te mperature. 2. l = 2.4 mh, i as = -12 a, v dd = -25 v, r g = 25 ?, starting t j = 25c. 3. i sd -17 a, di/dt 3 00 a/s, v dd bv dss , starting t j = 25 c. 4. essentiall y independent of op erating temperature typical character istics. FQD17P06tm FQD17P06 symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -60 -- -- v ? bv dss / ?t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.06 -- v/c i dss zero gate voltage drain current v ds = -60 v, v gs = 0 v -- -- -1 a v ds = -48 v, t c = 125c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -6.0 a -- 0.11 0.135 ? g fs forward transconductance v ds = -30 v, i d = -6.0 a -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 690 900 pf c oss output capacitance -- 325 420 pf c rss reverse transfer capacitance -- 80 105 pf switching characteristics t d(on) turn-on delay time v dd = -30 v, i d = -8.5 a, r g = 25 ? -- 13 35 ns t r turn-on rise time -- 100 210 ns t d(off) turn-off delay time -- 22 55 ns t f turn-off fall time -- 60 130 ns q g total gate charge v ds = -48 v, i d = -17 a, v gs = -10 v -- 21 27 nc q gs gate-source charge -- 4.2 -- nc q gd gate-drain charge -- 10 -- nc drain-source diode characte ristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -12 a i sm maximum pulsed drain-source diode forward current -- -- -48 a v sd drain-source diode forward voltage v gs = 0 v, i s = -12 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -17 a, di f / dt = 100 a/ s -- 92 -- ns q rr reverse recovery charge -- 0.32 -- c (note 4) (note 4) ipak tube n/a n/a 70 units fqu17p06tu fqu17p06
www.fairchildsemi.com 3 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 typical performance characteristics 0 01 20 03 04 05 60 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 0.36 0.40 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 10 -1 0 10 1 10 0 10 1 v gs top : - 15.0 v - 10.0 v - 8.0 v - 7.0 v - 6.0 v - 5.5 v - 5.0 v bottom : - 4.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] 10 -v ds , drain-source voltage [v] 0 4 8 2 1 6 1 2024 0 2 4 6 8 10 12 v ds = -30v v ds = -48v note : i d = -17 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] 10 v ds , drain-source voltage [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 24681 0 10 -1 10 0 10 1 150 25 -55 notes : 1. v ds = -30v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] figure 5. capacitance characteristics figu re 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
www.fairchildsemi.com 4 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 typical performance characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 2.85 /w m a x. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 25 50 75 100 125 150 0 2 4 6 8 10 12 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse -i d , drain current [a] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -6.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -v ds , drain-source voltage [v] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature t 1 , square w ave pulse duration [sec] figure 11. transient thermal response curve t 1 p dm t 2 z ? jc (t), thermal response [ o c/w]
www.fairchildsemi.com 5 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 figure 12. gate charge test circuit & waveform f igure 13. resistive switc hing test circuit & waveforms figure 14. unclamped inductive switching te st circuit & waveforms vv dsds vv gsgs 1010%% 90%90% tt d(d(onon)) tt rr tt onon tt ofofff tt d(d(ofofff)) tt ff vv dddd vv dsds rr ll dutdut rr gg vv gsgs chchargargee vv gsgs qq gg qq gsgs qq gdgd vv gsgs dudutt vv dsds 300300nfnf 50k50k ? 200n200nff 12v12v samsamee t tyypepe as as dudutt e ee as as as - - -- === 2 1 2 1 2 1 2 1 --- --- ------ lll asasas iii bvbv dsdsss 222 --- --- ---- ---- ---- ---- ---- ---- ----- ----- bv bv dsdsss -v-v dddd vv dddd vv dsds bvbv dssdss t t pp vv dddd ii asas vv ds ds (t)(t) ii d d (t(t)) titimmee dudutt rr gg lll iii ddd t t pp i g = const. vv gsgs vv gsgs
www.fairchildsemi.com 6 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 f igure 15. pe ak diode recovery dv/dt test circuit & waveforms ?? dutdut vv dsds ++ __ drivdriverer rr gg comcompplliimmentent ofof dutdut (n-(n-cchannelhannel)) vv gsgs ?? ddvv//dtdt ccoontntrroolllleed d bbyy rr gg ii sdsd ccononttrrolollleded byby pupullsse e peperriiodod vv dddd lll ii sdsd 1010vv vv gsgs ( ( drivdriver er )) ii sdsd ( ( dut dut )) vv dsds ( ( dut dut )) vv dddd bobodydy ddiiooddee forforwward ard vvololttagage e drdropop ii fmfm ,, bobodydy ddiiodode e ffororwwaarrd d ccuurrrrenentt vv sdsd bobodydy ddiiodode e rreevveerrssee ccuurrrrenentt ii rmrm bobodydy didiodode e rreecovcoveerryy dvdv/d/dtt didi//dtdt d d d = = = - - --- -- -- gate gate gate ------------------ --------- p p pul ul uls s s -------- -------- -------- e e e w w wi i id d d ----- ----- ----- t t th h h - - - gaga ga te te te pu pu pull l ss s e e e pepe pe rr r ii i odod od
www.fairchildsemi.com 7 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 mechanical dimensions figure 16 . to252 (d-pak), mo lded, 3-lead, option aa&ab package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt252-003
www.fairchildsemi.com 8 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation FQD17P06 / fqu17p06 rev c3 mechanical dimensions figure 17. to251 (i-pak), mo lded, 3-lead package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to251-003
www.fairchildsemi.com 9 FQD17P06 / fqu17p06 p-channel qfet ? mosfet ? 2 001 f airc hil d se m i con d u ct o r cor p o rati on f q d17 p0 6 / fqu 1 7p 0 6 rev c 3 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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